In this work, we report and discuss the results of minority carriers diffusion length measurements carried out in order to quantify the radiation damage induced by electron irradiation of X-rays detectors based on a metal–silicon carbide junction.The devices examined consisted of 4H-SiC n-type epitaxial layers on 4H-SiC nq-type substrate wafers, on which Schottky contacts were formed by gold deposition.The minority carriers diffusion length, extracted from the results of photocurrent measurements using a fitting procedure, was shown to exhibit a strong decrease with the radiation dose
LE DONNE, A., Binetti, S., Acciarri, M., Pizzini, S. (2004). Electrical characterization of electron irradiated X-rays detectors based on 4H-SiC epitaxial layers. DIAMOND AND RELATED MATERIALS, 13(3), 414-418 [10.1016/j.diamond.2003.11.079].
Electrical characterization of electron irradiated X-rays detectors based on 4H-SiC epitaxial layers
LE DONNE, ALESSIA;BINETTI, SIMONA OLGA;ACCIARRI, MAURIZIO FILIPPO;Pizzini, S.
2004
Abstract
In this work, we report and discuss the results of minority carriers diffusion length measurements carried out in order to quantify the radiation damage induced by electron irradiation of X-rays detectors based on a metal–silicon carbide junction.The devices examined consisted of 4H-SiC n-type epitaxial layers on 4H-SiC nq-type substrate wafers, on which Schottky contacts were formed by gold deposition.The minority carriers diffusion length, extracted from the results of photocurrent measurements using a fitting procedure, was shown to exhibit a strong decrease with the radiation dose
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