Nanoclusters of crystalline SnO2 have been grown in glass, starting from tin-doped silica prepared by a sol-gel method. Based upon a particular choice of molecular precursors, nanocrystallites with a mean radius of about 1 nm and a quite narrow size dispersion were obtained, resulting in wide-band-gap (>4 eV) quantum dots (QDs). In this system, differently from other semiconductor-doped glasses, both the glassy host and the nanophase are oxides of IV-group elements. Owing to their thermochemical compatibility, the two phases give stable optical-grade glass ceramics with potential applications in photonics, opening up the field to technological employments of wide-band-gap QDs. (C) 2002 American Institute of Physics.

Chiodini, N., Paleari, A., DI MARTINO, D., Spinolo, G. (2002). SnO2 nanocrystals in SiO2: A wide-band-gap quantum-dot system. APPLIED PHYSICS LETTERS, 81(9), 1702-1704 [10.1063/1.1503154].

SnO2 nanocrystals in SiO2: A wide-band-gap quantum-dot system

CHIODINI, NORBERTO;PALEARI, ALBERTO MARIA FELICE;DI MARTINO, DANIELA;SPINOLO, GIORGIO MARIO
2002

Abstract

Nanoclusters of crystalline SnO2 have been grown in glass, starting from tin-doped silica prepared by a sol-gel method. Based upon a particular choice of molecular precursors, nanocrystallites with a mean radius of about 1 nm and a quite narrow size dispersion were obtained, resulting in wide-band-gap (>4 eV) quantum dots (QDs). In this system, differently from other semiconductor-doped glasses, both the glassy host and the nanophase are oxides of IV-group elements. Owing to their thermochemical compatibility, the two phases give stable optical-grade glass ceramics with potential applications in photonics, opening up the field to technological employments of wide-band-gap QDs. (C) 2002 American Institute of Physics.
Articolo in rivista - Articolo scientifico
quantum dot, quantum confinement, tin oxide, high band gap, semiconductor.
English
26-ago-2002
81
9
1702
1704
none
Chiodini, N., Paleari, A., DI MARTINO, D., Spinolo, G. (2002). SnO2 nanocrystals in SiO2: A wide-band-gap quantum-dot system. APPLIED PHYSICS LETTERS, 81(9), 1702-1704 [10.1063/1.1503154].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/1300
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