Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.

Sanguinetti, S., Bietti, S., Scarpellini, D., Ballabio, A., Miglio, L., Isella, G., et al. (2015). GaAs nanostructures on Si platform. In Conference Proceeding 20th OptoElectronics and Communications Conference, OECC 2015 (pp.1-3). Institute of Electrical and Electronics Engineers Inc. [10.1109/OECC.2015.7340229].

GaAs nanostructures on Si platform

Sanguinetti, S;Bietti, S;Miglio, L;
2015

Abstract

Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.
paper
III-V Nanostructures; Molecular Beam Epitaxy; Silicon Integration; Single photon emission;
English
Opto-Electronics and Communications Conference, OECC 28 June - 2 July
2015
Conference Proceeding 20th OptoElectronics and Communications Conference, OECC 2015
9781467379441
2015
1
3
7340229
none
Sanguinetti, S., Bietti, S., Scarpellini, D., Ballabio, A., Miglio, L., Isella, G., et al. (2015). GaAs nanostructures on Si platform. In Conference Proceeding 20th OptoElectronics and Communications Conference, OECC 2015 (pp.1-3). Institute of Electrical and Electronics Engineers Inc. [10.1109/OECC.2015.7340229].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/119429
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