Multicrystalline Silicon was textured with picosecond laser. Different laser wavelengths (λ = 1064, 532, 355 nm) where compared regarding laser-induced damage. We found that λ = 355 nm picosecond radiation resulted in shallower defect-reach region. © 2015 OSA
Pellegrino, S., Longoni, L., Scorticati, D., Binetti, S., LE DONNE, A., Rolfi, A., et al. (2015). Random surface texturing of mc-Silicon for solar cells with picosecond lasers; a comparison between 1064 nm, 532 nm and 355 nm laser emission wavelengths. In CLEO: Applications and Technology, CLEO-AT 2015. Optical Society of America (OSA) [10.1364/CLEO_AT.2015.AM2K.5].
Random surface texturing of mc-Silicon for solar cells with picosecond lasers; a comparison between 1064 nm, 532 nm and 355 nm laser emission wavelengths
BINETTI, SIMONA OLGAPrimo
;LE DONNE, ALESSIASecondo
;GRILLI, EMANUELE ENRICO;
2015
Abstract
Multicrystalline Silicon was textured with picosecond laser. Different laser wavelengths (λ = 1064, 532, 355 nm) where compared regarding laser-induced damage. We found that λ = 355 nm picosecond radiation resulted in shallower defect-reach region. © 2015 OSA
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